SSP7464N 6.4 a, 60 v, r ds(on) 82 m ? n-channel enhancement mosfet elektronische bauelemente 30-jul-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc conv erters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8pp saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) (m ? ? i d (a) 60 82@v gs = 10v 6.4 115@v gs = 4.5v 5.4 absolute maximum ratings and thermal data (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current a t a =25c i d 6.4 a t a =70c 5.3 pulsed drain current b i dm 20 a continuous source current (diode conduction) a i s 2.3 a power dissipation a t a =25c p d 5.0 w t a =70c 3.2 operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data maximum junction to ambient a t Q 10 sec r ja 25 c / w steady-state 65 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ? ? gate ??? ? source ???? ? drain ref. millimete r ref. millimete r min. max. min. max. a 1.00 1.10 0 12 b 5.70 5.80 b 0.33 0.51 c 0.20 0.30 d 1.27bsc d 3.61 3.98 e 1.35 1.75 e 5.40 6.10 g 1.10 - f 0.08 0.20 g 3.60 3.99 sop-8pp b e f g g a e b d c d
SSP7464N 6.4 a, 60 v, r ds(on) 82 m ? n-channel enhancement mosfet elektronische bauelemente 30-jul-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbo min typ max unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 12v zero gate voltage drain current i dss - - 1 a v ds = 48v, v gs = 0v - - 5 v ds = 48v, v gs = 0v, t j =55 c on-state drain current a i d(on) 40 - - a v ds = 5v, v gs = 10v drain-source on-resistance a r ds(on) - - 82 m ? v gs = 10v, i d = 2a - - 115 v gs = 4.5v, i d = 2a forward transconductance a g fs - 40 - s v ds = 15v, , i d = 6a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v dynamic b total gate charge q g - 15 - nc i d = 6a v ds = 15v v gs = 4.5v gate-source charge q gs - 3 - gate-drain charge q gd - 5 - turn-on delay time td (on) - 15 - ns i d = 1a, v dd = 15v v gen = 10v r l = 6 ? rise time t r - 10 - turn-off delay time td (off) - 54 - fall time t f - 26 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not subject to production testing.
|
